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RECOMBINATION IN SILICON SOLAR CELLS
Ismoilov U.
Master student Mirzaalimov N.
PhD student Jurayeva S.
Master student Andijan State University Alijonov A. Bachelor student Zulunova M.
Bachelor student Andijan machine building institute
Abstract
This article describes the recombination processes in silicon-based solar cells. Both the results obtained are given and theoretically analyzed.
Keywords: silicon, recombination, generation, solar cell
The demand for solar cells is growing day by day [1]. The industry mainly produces silicon-based solar cells. This is because the cost of solar cells made of silicon is cheaper than the rest [2]. Every country has a different climate. Solar elements made of silicon are also sensitive to external influences. Climate change is affecting the photoelectric properties of silicon-based solar cells (SBSC) [3]. In our research, we studied the effect of temperature on the properties of silicon and SBSC. The conductivity of silicon is directly proportional to the temperature. That is, the higher the temperature, the higher the concentration of charge carriers [4]. This results in a narrowing of the width of the silicon restricted zone. As the zone narrows, it begins to absorb more spectral light. Hence, the efficiency of SBSC should increase. But there are also negative effects of temperature [5]. That is, the concentration of phonons in silicon increases with increasing temperature. This reduces the mobility of the charge carriers in
silicon. This suggests that the efficiency of SBSC increases to a certain value, not continuously, with increasing temperature, and then decreases. The value of the temperature at which SBSC has the maximum efficiency is called the nominal operating temperature (NIT). Silicon-based solar cells typically have a NOCT value of 35 ° C.
Recombination of SRH depends on the defects, and the process of its formation is as follows. The electron in the conduction band first descends to a defective surface, then emits a phonon again, enters the valence band, and joins the cavity [6].
j^SRH _
np - n
(1)
zp (n + n ) + Tn (p + Pi ) Each recombination process determines the lifetimes of electrons and cavities. That is, the less recombination, the longer the lifespan [7].
2
Graph 1. Dependence of the SRH lifetime concentration of electrons in silicon-based solar cells on the input
concentration
Another type of recombination is surface recom- The rate of recombination depends on the concen-
bination, which occurs mainly on the surface of the so- tration of impurities on the surface and is expressed as lar cell. To get rid of this, the surface of the solar cells follows.
is passivated [8].
Rsurf
nP - n,,eff
(n + ni)1 sp +(P + Pi)
(2)
s = s
1 + s.
r N Y
ref
\ Nref J
(3)
Figure 2. Temperature dependence of the lifetime of electrons in silicon-based solar cells
Nowadays, technology is evolving, which makes it easier for us to perform calculations. We also developed a program called "Suntulip-2 for silicon solar cell" to perform the above theoretical calculations in C # 6.0 programming language. All of the above values
are obtained in this program. In short, in order to prolong the life of solar cells, we must first reduce the amount of recombination.
References
1. Aliev, R., Abduvoxidov, M., Mirzaalimov, N., and Gulomov., J. (2020). Kremniy asosli quyosh ele-mentlarida rekombinatsiya va generatsiya jarayoni. Science and Education, 1(2), 230-235. doi: 10.24412/2181-0842-2020-2-230-235
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3. Gulomov, J., Aliev, R., Abduvoxidov, M., Mirzaalimov, A., Mirzaalimov, N. (2020). Exploring optical properties of solar cells by programming and modeling. Global Journal of Engineering and Technology Advances, 5(1), 032-038; doi.org/10.30574/gjeta.2020.5.1.0080
4. Aliev, R., Gulomov, J., Abduvohidov, M. et al. (2020) Stimulation of Photoactive Absorption of Sunlight in Thin Layers of Silicon Structures by Metal Nanoparticles. Appl. Sol. Energy 56, 364-370; https://doi.org/10.3103/S0003701X20050035
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THE LIFETIME OF CHARGE CARRIERS IN SILICON-BASED SOLAR CELLS
Ismoilov U.
Master student
Mirzaalimov N.
PhD student Jurayeva S.
Master student Andijan State University
Negmatov B.
Bachelor student
Azimov S.
Bachelor student
Alijonov A.
Bachelor student
Zulunova M.
Bachelor student Andijan machine building institute
Abstract
In this paper, the effect of temperature and input concentration on the lifetimes of electrons and cavities in silicon-based solar cells is theoretically analyzed.
Keywords: life time, silicon, temperature, model, donor, acceptor
Solar elements are now becoming the main source of energy. Because the world is running out of non-renewable energy sources [1]. The best solution for the economy at this time is, of course, renewable energy sources. There are many types of solar cells. The cheapest of these are silicon-based solar cells. Silicon is one of the most common elements in the world [2]. In order to increase the efficiency of a solar cell, we must first know more about its internal properties. For example, when electrons and cavities age, what is the efficiency of solar cells? Of course, if you have a long life. No feature is self-explanatory. They, in turn, are inextricably linked to many processes [3].
The lifetime is the time between particle generation and recombination. So to know more about life expectancy, we need to know more about recombination and generation [4].
Generation is the process of forming electrons and cavities. There are many types of generations. Avalanche, thermogeneration and photogeneration [5].
Photogeneration is the process of generating light. Its mechanism is based on the photo effect. But the photo effect is also divided into two. Internal and external photo effect [6]. An event in the solar system can be called an internal photo effect. It is called the photovoltaic effect by another name. Photogeneration in solar cells depends on the wavelength of light and the thickness of the solar cell, as well as the surface area of the solar cell [7].