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2SiC nanostructures and their optoelectronic device applications
Weiyou Yang
Ningbo University of Technology, China
Silicon carbide (SiC) is recognized as one of most important candidates of third generation semiconductors, owing to its superior properties such as outstanding mechanical properties, excellent chemical inertness, high thermal stability as well as high thermal conductivity, which allow the SiC materials to be serviced under high-temperature/high-voltage/high-power harsh environments. Here, we share our recent works on the controlled growth of SiC low-dimensional nanostructures, and their potential applications in optoelectronic devices, such as field emission cathodes, pressure sensors, photoelectric detection and energy storage.
