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6SJIF 2024 = 7.404 / ASI Factor = 1.7
POSSIBILITIES OF LOW-ENERGY ION IMPLANTATION IN OBTAINING
NANOMATERIALS
Irisboyev Farkhod Boymirzayevich
Teacher of Jizzakh Polytechnic Institute. Mukhtorov Doston Naim ugli
Assistant, Jizzakh branch of the National University of Uzbekistan
The implantation of medium and high energy beams is used for the formation of p- or n-type compounds in semiconductors. In recent years, they have also been used to obtain nanodots in deep layers. Low-energy ion implantation is mainly used to modify the surface layers of solids, and to obtain nanophases, nanoclusters, nanocrystals, and nanofilms.
Key words: Low energy ion implantation, modification process, diffusion arrangement, ion-doped layer, ion-deformed layer, single crystal nanomaterials, nanopleons, laser technologies, emission properties.
INTRODUCTION
Possibilities of low-energy ion implantation in obtaining nanomaterials. Depending on the energy, the ion implantation method can be conditionally divided into 3 types:
1 - low energy Ei~0.2-10keV
2 - medium energy Ei~10-50keV
3 - high energy Ei>50keV
MATERIALS AND METHODS
The implantation of medium and high energy beams is used for the formation of p- or n-type compounds in semiconductors. In recent years, they have also been used to obtain nanodots in deep layers. Implantation of low-energy ions is mainly used to modify the surface layers of a solid body, and to obtain nanophases, nanoclusters, nanocrystals, and nanofilms. The modification process can be carried out without a reaction on the surface, as a result of which the physical properties of the surface change and the secondary emission property increases. Ion bombardment - the ions hitting the target may or may not remain in the sample. In ion implantation, the ions remain inside the target. In low-energy ion implantation, the ions are mainly deposited in the surface and subsurface layers of the solid. When ions hit the surface of a single crystal, some of them can continue their movement through the channels, and this can continue for long distances.
ABSTRACT
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SJIF 2024 = 7.404 / ASI Factor = 1.7
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Figure 1. Phenomena occurring at the surface during ion implantation There are two types of channeling: axial and horizontal. The main part of the ions starts to disperse randomly and settle in the subsurface layers, such a settlement is called diffusion settlement. They are located at a certain depth depending on the energy. Layers containing ions are called ion-doped layers. The ion doped layer and the layers below this layer, which are 2-3 times larger than the doped layer, break the crystal lattice and start to become amorphous.
After ion implantation, heat or laser treatment is used to crystallize the amorphous layers to form the desired briquette.
ion doped layer Jayer damaged by ion
Figure 2. Appearance of ion-doped layer RESULT AND DISCUSSION
Experiments show that in small doses D < 1015 cm-2 ions fall on separate areas of the surface, these areas can be called nanoclusters in a conventional way, and islands in larger ones. These samples can be heated to form single crystals. By this method, BaSi2, CoSi2- on Si surface; Nanoclusters of GaxBa1-xAs and GaxNa1-xAs were obtained on the surface of GaAs.
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SJIF 2024 = 7.404 / ASI Factor = 1.7
3 - picture. Appearance of Si(111) surface doped with Ba+ ions, Ei=1keV When the dose of ions increases, the clusters expand and islands are formed, at large doses D>1016 cm-2 a single alloyed layer is formed, and a new type of nanomaterial can be obtained by heating this layer. It is possible to obtain nanomaterials or nanofilms on the surface and subsurface layers of this material by using the ion implantation method to obtain films with the same atoms, mainly by introducing other atoms of a certain dose to the surface and subsurface parts. CONCLUSION
Materials of this type are widely used in various amplifiers and transistors in laser technologies. If the concentration of ions falling on a unit surface is 1014-10 15 cm-2, then nanomaterials are formed at different points of the surface, and with increasing dose, nanofilms are formed on the surface.
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SJIF 2024 = 7.404 / ASI Factor = 1.7
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